If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored.į-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional nonvolatile memories have delays of 5 or more milliseconds before data becomes nonvolatile. F-RAM does not have any write delays and data is instantly nonvolatile. This eliminates the need for wear leveling to support a product over its lifespan.į-RAM provides fast writes at full interface speed. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. Cypress Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Cypress Semiconductor Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM.
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